ICPB1001

RF Transistor by ICONIC RF (5 more products)

Note : Your request will be directed to ICONIC RF.

The ICPB1001 from ICONIC RF is a RF Transistor with Frequency DC to 14 GHz, OIP3 38 dBm, Duty_Cycle 10%, Gain 10 to 20 dB, Power Added Effeciency 60 to 66%. More details for ICPB1001 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      ICPB1001
    • Manufacturer :
      ICONIC RF
    • Description :
      Discrete Power GaN HEMT 6 Watt

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Wireless Infrastructure
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 14 GHz
    • OIP3 :
      38 dBm
    • Pulsed Width :
      100 uSec
    • Duty_Cycle :
      10%
    • Gain :
      10 to 20 dB
    • Power Added Effeciency :
      60 to 66%
    • Supply Voltage :
      28 V
    • Input Power :
      31 dBm
    • Voltage - Gate-Source (Vgs) :
      -3 V
    • Current :
      25 mA (Bais)
    • Drain Current :
      375 mA
    • Quiescent Drain Current :
      60 mA
    • Power Dissipation (Pdiss) :
      4 W
    • Dimension :
      0.82 x 0.53 x 0.10 mm
    • RoHS :
      Yes
    • Grade :
      Commercial, Military, Space
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Linear Gain : 18 dB

    Technical Documents

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