ICPB1001

RF Transistor by ICONIC RF

Note : Your request will be directed to ICONIC RF.

The ICPB1001 from ICONIC RF is a RF Transistor with Frequency DC to 14 GHz, OIP3 38 dBm, Duty_Cycle 10%, Gain 10 to 20 dB, Power Added Effeciency 60 to 66%. More details for ICPB1001 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ICPB1001
  • Manufacturer
    ICONIC RF
  • Description
    Discrete Power GaN HEMT 6 Watt

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 14 GHz
  • OIP3
    38 dBm
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    10%
  • Gain
    10 to 20 dB
  • Power Added Effeciency
    60 to 66%
  • Supply Voltage
    28 V
  • Input Power
    31 dBm
  • Voltage - Gate-Source (Vgs)
    -3 V
  • Current
    25 mA (Bais)
  • Drain Current
    375 mA
  • Quiescent Drain Current
    60 mA
  • Power Dissipation (Pdiss)
    4 W
  • Dimension
    0.82 x 0.53 x 0.10 mm
  • RoHS
    Yes
  • Grade
    Commercial, Military
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Linear Gain : 18 dB

Technical Documents

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