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BFP620

RF Transistor by Infineon Technologies (5 more products)

Note : Your request will be directed to Infineon Technologies.

The BFP620 from Infineon is a Silicon NPN RF Bipolar Transistor suitable for a  wide range of wireless applications. This surface-mount transistor has an Ft of 65 GHz and provides an OP1dB of 14.5 dBm (OIP3 of 25.5 dBm @ 1.8 GHz) with a gain of 21.5 @ 1.8 GHz and has a noise figure of 1.3 dB.

The high-linearity transistor is based on Infineon’s SiGe:C technology qualified according to AEC Q101, and also qualified for industrial applications based on tests of JEDEC47/20/22. The BFP620 is available in a RoHS compliant package and is suitable for WLAN and CDMA applications, including low noise amplifiers (LNAs) in SDARS receivers, LNAs for wireless communications, and LNAs for ISM band applications.

Product Specifications

    Product Details

    • Part Number :
      BFP620
    • Manufacturer :
      Infineon Technologies
    • Description :
      Surface Mount High Linearity Silicon NPN RF Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      SiGe:C
    • Application Industry :
      ISM
    • Application :
      CDMA and WLAN
    • CW/Pulse :
      Pulse
    • Frequency :
      DC to 6 GHz
    • fT :
      65 GHz
    • P1dB :
      14.5 dBm
    • OIP3 :
      25.5 dBm
    • Power Gain (Gp) :
      9.5 to 21.5 dB
    • Noise Figure :
      0.7 to 1.3 dB
    • Supply Voltage :
      2.3 V
    • Breakdown Voltage :
      2.3 to 2.8 V
    • Current :
      80 mA
    • Leakage Current :
      10 to 900 nA
    • Power Dissipation (Pdiss) :
      185 mW
    • Junction Temperature (Tj) :
      150 Degree C
    • Package Type :
      Surface Mount
    • Package :
      SOT343
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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