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BFP640F

RF Transistor by Infineon Technologies

Note : Your request will be directed to Infineon Technologies.

The BFP640F from Infineon is a high linearity, low profile Silicon NPN RF Bipolar Transistor suitable for energy efficient designs up to 8 GHz. This transistor has a transition frequency of 42 GHz and provides an OP1dB of 13.5 dBm (OIP3 of 28 dBm @ 2.4 GHz) with a high gain of 21.5 @ 2.4 GHz and a minimum noise figure of 0.65 dB. It is based on Infineon’s SiGe:C technology and is available in a TSFP-4 package.

This transistor is qualified for industrial applications based on JEDEC47/20/22 tests and is suitable for WLAN and CDMA applications, low noise amplifiers (LNAs) in GNSS receivers, satellite radio (SDARs, DAB) receivers, and multimedia applications such as CATV and FM radio.

Product Specifications

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Product Details

  • Part Number
    BFP640F
  • Manufacturer
    Infineon Technologies
  • Description
    High Linearity, Low Profile Silicon NPN RF Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    SiGe:C
  • fT
    42 GHz
  • Power
    23.5 to 28 dBm
  • Power(W)
    0.22 to 0.63 W
  • P1dB
    10.5 to 12.5 dBm
  • Gain
    12.5 to 33 dB
  • Noise Figure
    0.55 to 1.0 dB
  • Polarity
    NPN
  • Breakdown Voltage
    4.1 to 4.7 V
  • Voltage - Collector Base (Vcbo)
    13 V
  • Voltage - Collector Emitter (Vceo)
    3.6 to 4.1 V
  • Voltage - Collector Emitter (Vces)
    13 V
  • Voltage - Emitter Base
    1.2 V
  • Collector Current (Ic)
    50 mA
  • Base Current (Ib)
    3 mA
  • Power Dissipation (Pdiss)
    200 mW
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    150 Degree C
  • Package Type
    Surface Mount
  • Package
    TSFP-4-1
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C

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