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BFP840FESD

RF Transistor by Infineon Technologies (3 more products)

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The BFP840FESD from Infineon is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. It has a high transition frequency of 85 GHz and has an RF input power handling capability of up to 20 dBm. The transistor provides an OIP3 of 22 dBm and a gain of 23 dB with a noise figure of 0.75 dB at 5.5 GHz. It is available in a small form factor leadless package and is ideal for use in satellite radios, WiMAX and navigation systems.

Product Specifications

    Product Details

    • Part Number :
      BFP840FESD
    • Manufacturer :
      Infineon Technologies
    • Description :
      RF HBT for 5GHz Applications

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      GNSS, SATCOM, Wi-Fi / Bluetooth
    • Application :
      WLAN, WiMax, wireless communication
    • Frequency :
      Up to 85 GHz
    • P1dB :
      4 to 5 dBm
    • OIP3 :
      19.5 to 22 dBm
    • Gain :
      23 dB
    • Power Gain (Gp) :
      15.5 to 35 dB
    • Noise Figure :
      0.55 to 1.3 dB
    • Supply Voltage :
      1.8 V
    • Input Power :
      20 dBm
    • Breakdown Voltage :
      2.5 to 2.6 V
    • Current :
      10 mA
    • Collector Current (Ic) :
      35 mA
    • Power Dissipation (Pdiss) :
      75 mW
    • Junction Temperature (Tj) :
      150 Degree C
    • Package Type :
      Surface Mount
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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