BFR740EL3 Image

BFR740EL3

Note : Your request will be directed to Infineon Technologies.

The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) that operates from DC to 12 GHz. It delivers a gain of 20 dB with a noise figure of 0.8 dB @ 5.5 GHz while operating from a 3 V supply. This device is available in a low profile and small form factor leadless surface mount package. It is ideal for wireless communications, GNSS, satellite communications, ISM, TV, CATV and FM radio applications. The BFR740EL3 is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Product Specifications

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Product Details

  • Part Number
    BFR740EL3
  • Manufacturer
    Infineon Technologies
  • Description
    RF Bipolar Transistor from DC to 12 GHz

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    ISM, Radar, GNSS, Wi-Fi / Bluetooth
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 12 GHz
  • Power
    11 dBm
  • Power(W)
    0.0126 W
  • OIP3
    25 dBm
  • Gain
    24.5 dB
  • Noise Figure
    0.5 dB
  • Supply Voltage
    3 V
  • Storage Temperature
    -55 to 150 Degrees C

Technical Documents

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