BFR740EL3 Image

BFR740EL3

RF Transistor by Infineon Technologies

Note : Your request will be directed to Infineon Technologies.

The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) that operates from DC to 12 GHz. It delivers a gain of 20 dB with a noise figure of 0.8 dB @ 5.5 GHz while operating from a 3 V supply. This device is available in a low profile and small form factor leadless surface mount package. It is ideal for wireless communications, GNSS, satellite communications, ISM, TV, CATV and FM radio applications. The BFR740EL3 is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Product Specifications

    Product Details

    • Part Number :
      BFR740EL3
    • Manufacturer :
      Infineon Technologies
    • Description :
      RF Bipolar Transistor from DC to 12 GHz

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      ISM, Radar, GNSS, Wi-Fi / Bluetooth
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 12 GHz
    • Power :
      11 dBm
    • Power(W) :
      0.0126 W
    • OIP3 :
      25 dBm
    • Gain :
      24.5 dB
    • Noise Figure :
      0.5 dB
    • Supply Voltage :
      3 V
    • Storage Temperature :
      -55 to 150 Degrees C

    Technical Documents

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