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BFR840L3RHESD

RF Transistor by Infineon Technologies (4 more products)

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The BFR840L3RHESD from Infineon is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection suitable for applications in the 5 GHz band. It provides an OIP3 of 18 dBm with a gain of 22 dB, and a noise figure of 0.65 dB at 5.5 GHz. The transistor is available in a low profile and small form factor leadless package and is suitable for WLAN 2.4 GHz / 5-6 GHz bands, WiMAX & UWB, Satellite Radio (SDARs, DAB) and navigation systems (GPS, Glonass, Beidou, and Galileo) applications.

Product Specifications

    Product Details

    • Part Number :
      BFR840L3RHESD
    • Manufacturer :
      Infineon Technologies
    • Description :
      RF Transistor for 5 GHz Band Applications

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      GNSS, SATCOM, Wireless Infrastructure, Wi-Fi / Bluetooth
    • Application :
      WLAN, WiMax
    • Frequency :
      Upto 75 GHz
    • P1dB :
      4 dBm
    • OIP3 :
      18 dBm
    • Gain :
      22 dB
    • Power Gain (Gp) :
      27 to 31 dB
    • Noise Figure :
      0.5 to 0.65 dB
    • Supply Voltage :
      1.8 V
    • Input Power :
      20 dBm
    • Breakdown Voltage :
      2.25 to 2.6 V
    • Current :
      10 to 35 mA
    • Package Type :
      Surface Mount
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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