GTVA261701FA V1 R2 Image

GTVA261701FA V1 R2

RF Transistor by Infineon Technologies (108 more products)

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The GTVA261701FA V1 R2 from Infineon is a high power RF GaN HEMT that operates from 2620 to 2690 MHz. This HEMT provides an output power of 170 Watts (P3dB) with a gain of 16 dB and efficiency of 72%. It requires a 50 V supply and can be used in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

  • Part Number
    GTVA261701FA V1 R2
  • Manufacturer
    Infineon Technologies
  • Description
    Thermally Enhanced High Power RF GaN HEMT from 2620 to 2690 MHz
  • Transistor Type
  • Grade
    Military, Commercial
  • Frequency
    2620 to 2690 MHz
  • Gain
    18 dB
  • Power
    52.3 dBm (P3dB)
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
  • Drain Current
    15 to 18 A
  • Voltage - Gate-Source (Vgs)
    -3.8 to -2.3 V
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