PTFA 070601E - 60 W Image

PTFA 070601E - 60 W

RF Transistor by Infineon Technologies (107 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PTFA 070601E - 60 W from Infineon Technologies is a RF Transistor with Frequency 725 to 770 MHz, Gain 18 - 19.5 dB, P1dB 60.0 W, Supply Voltage 28.0 V, Breakdown Voltage - Drain-Source 65 V. More details for PTFA 070601E - 60 W can be seen below.

Product Specifications

  • Part Number
    PTFA 070601E - 60 W
  • Manufacturer
    Infineon Technologies
  • Description
    Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 - 770 MHz
  • Transistor Type
  • Application
    GSM, CDMA, WCDMA
  • Application Type
    Communication
  • Frequency
    725 to 770 MHz
  • Gain
    18 - 19.5 dB
  • P1dB
    60.0 W
  • Supply Voltage
    28.0 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.48
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • IMD
    -29 to -31dBc
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.15 Ohms
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to +12 V
  • Thermal Resistance
    0.8 Degree/W
  • Package Type
    H-36265-2
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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