PTFB 211503FL - 150 W Image

PTFB 211503FL - 150 W

RF Transistor by Infineon Technologies (109 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PTFB 211503FL - 150 W from Infineon Technologies is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 16.5 - 18 dB, P1dB 150.0 W, Supply Voltage 30.0 V, Breakdown Voltage - Drain-Source 65 V. More details for PTFB 211503FL - 150 W can be seen below.

Product Specifications

  • Part Number
    PTFB 211503FL - 150 W
  • Manufacturer
    Infineon Technologies
  • Description
    High Power RF LDMOS FETs, 150 W, 30 V, 2110 - 2170 MHz
  • Transistor Type
  • Application
    GSM, CDMA, WCDMA
  • Application Type
    Communication
  • Frequency
    2110 to 2170 MHz
  • Gain
    16.5 - 18 dB
  • P1dB
    150.0 W
  • Supply Voltage
    30.0 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.4
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • IMD
    -28 to -30 dBc
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.08 Ohms
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to +10 V
  • Thermal Resistance
    0.27 Degree/W
  • Package Type
    H-34288-4/2
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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