PTFB 213208SV - 320 W Image

PTFB 213208SV - 320 W

RF Transistor by Infineon Technologies (106 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PTFB 213208SV - 320 W from Infineon Technologies is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 15.75 - 17 dB, P1dB 320.0 W, Supply Voltage 28.0 V, Breakdown Voltage - Drain-Source 65 V. More details for PTFB 213208SV - 320 W can be seen below.

Product Specifications

  • Part Number
    PTFB 213208SV - 320 W
  • Manufacturer
    Infineon Technologies
  • Description
    High Power RF LDMOS FET, 320 W, 28 V, 2110 - 2170 MHz
  • Transistor Type
  • Application
    GSM, CDMA, WCDMA
  • Application Type
    Communication
  • Frequency
    2110 to 2170 MHz
  • Gain
    15.75 - 17 dB
  • P1dB
    320.0 W
  • Supply Voltage
    28.0 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.32
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.05 Ohms
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to +10 V
  • Thermal Resistance
    0.2 Degree/W
  • Package Type
    H-34275G-6/2
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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