PTFC 210202FC - 28 W Image

PTFC 210202FC - 28 W

RF Transistor by Infineon Technologies (108 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PTFC210202FC from Infineon Technologies is a high power RF LDMOS FET that has been designed for use in cellular amplifier applications in from 1800 to 2200 MHz. It provides up to 28 W of power and requires a 28 V supply for operation. It is available in a RoHS package.

Product Specifications

  • Part Number
    PTFC 210202FC - 28 W
  • Manufacturer
    Infineon Technologies
  • Description
    1800 to 2200 MHz LDMOS Transistor Provides 28 Watts Power
  • Transistor Type
  • Application
    GSM, CDMA, WCDMA
  • Application Type
    Communication
  • Frequency
    1800 to 2200 MHz
  • Gain
    20 - 21 dB
  • P1dB
    28.0 W
  • Supply Voltage
    28.0 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.29
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.05 Ohms
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to +10 V
  • Thermal Resistance
    2.2 Degree/W
  • Package Type
    H-37248-4
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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