PTVA 123501FC - 350 W Image

PTVA 123501FC - 350 W

RF Transistor by Infineon Technologies (107 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PTVA 123501FC - 350 W from Infineon Technologies is a RF Transistor with Frequency 1200 to 1400 MHz, Gain 15.5 - 16 dB, Supply Voltage 50.0 V, Breakdown Voltage - Drain-Source 105 V, Drain Efficiency 0.55. More details for PTVA 123501FC - 350 W can be seen below.

Product Specifications

  • Part Number
    PTVA 123501FC - 350 W
  • Manufacturer
    Infineon Technologies
  • Description
    High Power RF LDMOS FET, 350 W, 50 V, 1200 - 1400 MHz
  • Transistor Type
  • Application
    UHF, L Band
  • Application Type
    Communication
  • Frequency
    1200 to 1400 MHz
  • Gain
    15.5 - 16 dB
  • Supply Voltage
    50.0 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Drain Efficiency
    0.55
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.1 Ohms
  • Voltage - Drain-Source (Vdss)
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to +12 V
  • Thermal Resistance
    0.34 Degree/W
  • Package Type
    H-37248-2
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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