PXAC 261202FC - 120 W Image

PXAC 261202FC - 120 W

RF Transistor by Infineon Technologies (109 more products)

Note : Your Quotation Request will be directed to Infineon Technologies.

The PXAC 261202FC - 120 W from Infineon Technologies is a RF Transistor with Frequency 2496 to 2690 MHz, Gain 12.5 - 13.5 dB, Supply Voltage 28.0 V, Breakdown Voltage - Drain-Source 65 V, Drain Efficiency 0.45. More details for PXAC 261202FC - 120 W can be seen below.

Product Specifications

  • Part Number
    PXAC 261202FC - 120 W
  • Manufacturer
    Infineon Technologies
  • Description
    High Power RF LDMOS FET 120W, 28V, 2496-2690MHz
  • Transistor Type
  • Application
    GSM, CDMA, WCDMA
  • Application Type
    Communication
  • Frequency
    2496 to 2690 MHz
  • Gain
    12.5 - 13.5 dB
  • Supply Voltage
    28.0 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.45
  • Drain Leakage Current (Id)
    1.0 µA - 10 µA
  • Gate Leakage Current (Ig)
    1µA
  • Junction Temperature (Tj)
    200 Degrees C
  • On Resistance
    0.16 - 0.19 Ohms
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to +10 V
  • Thermal Resistance
    0.48 Degree/W
  • Package Type
    H-37248-4
  • RoHS
    Yes
  • Storage Temperature
    -40 to +150 Degree C
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