IB0912L200

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB0912L200 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 53.01 to 54.52 dBm, Power(W) 283.14 W, Duty_Cycle 0.227, Gain 10.3 dB. More details for IB0912L200 can be seen below.

Product Specifications

  • Part Number
    IB0912L200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 to 1215 MHz, 10.3 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    53.01 to 54.52 dBm
  • Power(W)
    283.14 W
  • Peak Output Power
    200 W
  • Pulsed Width
    444x (7us on, 6us off)
  • Duty_Cycle
    0.227
  • Gain
    10.3 dB
  • Power Gain (Gp)
    9.60 to 11.10 dB
  • Supply Voltage
    44 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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