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The IB0912M600 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 57.78 to 59.78 dBm, Power(W) 950.6 W, Duty_Cycle 0.1, Gain 8.5 dB. Tags: Flanged. More details for IB0912M600 can be seen below.
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
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