IB1011L40

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011L40 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 46.02 to 47.52 dBm, Power(W) 56.49 W, Gain 9.7 dB, Power Gain (Gp) 11.87 to 13.37 dB. More details for IB1011L40 can be seen below.

Product Specifications

  • Part Number
    IB1011L40
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 9.7 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    46.02 to 47.52 dBm
  • Power(W)
    56.49 W
  • Peak Output Power
    40 W
  • Pulsed Width
    32 to 48 us
  • Gain
    9.7 dB
  • Power Gain (Gp)
    11.87 to 13.37 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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