IB2226MH160

RF Transistor by Integra Technologies, Inc. (204 more products)

Note : Your request will be directed to Integra Technologies, Inc..

The IB2226MH160 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.25 to 2.55 GHz, Power 52.04 to 53.42 dBm, Power(W) 219.79 W, Duty_Cycle 0.1, Gain 8.5 dB. Tags: Flange. More details for IB2226MH160 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB2226MH160
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      2.25 to 2.55 GHz, Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Radar
    • Application :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      2.25 to 2.55 GHz
    • Power :
      52.04 to 53.42 dBm
    • Power(W) :
      219.79 W
    • Peak Output Power :
      160 W
    • Pulsed Width :
      200 us
    • Duty_Cycle :
      0.1
    • Gain :
      8.5 dB
    • Supply Voltage :
      34 V
    • Breakdown Voltage :
      65 V (Collector Emmiter)
    • Drain Efficiency :
      0.43
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -65 to 200 Degree C

    Technical Documents

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