IB2729M170

RF Transistor by Integra Technologies, Inc. (161 more products)

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The IB2729M170 from Integra Technologies, Inc. is a RF Transistor with Frequency 2700 to 2900 MHz, Gain 9.5 dB, Power 52.83 dBm, Input Power 192 W, Supply Voltage 36 V. More details for IB2729M170 can be seen below.

Product Specifications

  • Part Number
    IB2729M170
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2700 to 2900 MHz, 9.5 dB Bipolar Transistor
  • Transistor Type
  • Application Type
    Radar
  • Grade
    Military, Commercial, Space, Aerospace, SATCOM
  • Frequency
    2700 to 2900 MHz
  • Gain
    9.5 dB
  • Power
    52.83 dBm
  • Input Power
    192 W
  • Supply Voltage
    36 V
  • Drain Efficiency
    0.5
  • Input Return Loss
    7 dB
  • Power Dissipation (Pdiss)
    21.4 W
  • Package Type
    Flanged
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