IB3135MH20

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB3135MH20 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 33.01 dBm, Power(W) 2 W, Duty_Cycle 0.1, Gain 7.5 dB. More details for IB3135MH20 can be seen below.

Product Specifications

  • Part Number
    IB3135MH20
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3100 to 3500 MHz, 8.5 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    33.01 dBm
  • Power(W)
    2 W
  • Peak Output Power
    20 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    7.5 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C
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