IB3135MH45

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB3135MH45 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 36.53 dBm, Power(W) 4.5 W, Duty_Cycle 0.1, Gain 9.3 dB. Tags: Flange. More details for IB3135MH45 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB3135MH45
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      3100 to 3500 MHz, 9.3 dB Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Radar
    • Application :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      3.1 to 3.5 GHz
    • Power :
      36.53 dBm
    • Power(W) :
      4.5 W
    • Peak Output Power :
      45 W
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      0.1
    • Gain :
      9.3 dB
    • Supply Voltage :
      36 V
    • Breakdown Voltage :
      70 V (Collector Emmiter)
    • Drain Efficiency :
      0.45
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -65 to 200 Degree C

    Technical Documents

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