IDM175CW300

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IDM175CW300 from Integra Technologies, Inc. is a RF Transistor with Frequency 1 to 200 MHz, Power 54.77 dBm, Power(W) 299.92 W, Gain 14.5 dB, Power Gain (Gp) 15.43 dB. More details for IDM175CW300 can be seen below.

Product Specifications

  • Part Number
    IDM175CW300
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    175000 to 200000 MHz, 15.43 dB MOSFET Transistor
  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    VHF
  • CW/Pulse
    Pulse
  • Frequency
    1 to 200 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • Gain
    14.5 dB
  • Power Gain (Gp)
    15.43 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 V
  • Breakdown Voltage - Drain-Source
    120 to 200 V
  • Drain Efficiency
    0.5
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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