IDM175CW300

RF Transistor by Integra Technologies, Inc. (161 more products)

Note : Your Quotation Request will be directed to Integra Technologies, Inc..

The IDM175CW300 from Integra Technologies, Inc. is a RF Transistor with Frequency 175000 to 200000 MHz, Gain 15.43 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 120 - 200 V, Drain Efficiency 0.5. More details for IDM175CW300 can be seen below.

Product Specifications

  • Part Number
    IDM175CW300
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    175000 to 200000 MHz, 15.43 dB MOSFET Transistor
  • Transistor Type
  • Application
    VHF
  • Grade
    Military, Commercial, Space, Aerospace, SATCOM
  • Frequency
    175000 to 200000 MHz
  • Gain
    15.43 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 - 200 V
  • Drain Efficiency
    0.5
  • Drain Leakage Current (Id)
    5 mA
  • Input Return Loss
    10 dB
  • Junction Temperature (Tj)
    -55 to +200 Degrees C
  • Power Dissipation (Pdiss)
    300 W
  • Voltage - Drain-Source (Vdss)
    120V
  • Voltage - Gate-Source (Vgs)
    20V
  • Thermal Resistance
    0.20 Deg C/W
  • Package Type
    Flanged
  • Storage Temperature
    -55 to +125 Degrees C
  • Note
    Gate Threshold Voltage: 1 V, Continious power Dissipation: 1100 W, Peak Drain Current: 40 A
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.