IGN0450L1250 Image

IGN0450L1250

RF Transistor by Integra Technologies, Inc.

Note : Your request will be directed to Integra Technologies, Inc..

The IGN0450L1250 from Integra is a GaN-on-SiC push-pull RF Power Transistor that operates from 430 to 450 MHz. The transistor has been designed for P band radar systems. It delivers a peak output power of more than 1250 W with a gain of 18.5 dB and has an efficiency of up to 85%. The transistor has a pulse droop of -0.4 dB and a duty cycle of 25 %. It requires a DC supply of 50 V and is available in a metal-based package with a thermal enhancement and uses an epoxy-sealed ceramic lid.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN0450L1250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1250 W GaN Power Transistor from 430 to 450 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    430 to 450 MHz
  • Power
    60.97 dBm
  • Power(W)
    1250 W
  • Pulsed Width
    18 ms
  • Duty_Cycle
    25 %
  • Gain
    17.5 to 20 dB
  • Input Return Loss
    7 to 18 dB
  • Supply Voltage
    50 V
  • Input Power
    12.5 to 22 W
  • Current
    1 to 120 mA
  • Drain Efficiency
    70 to 85 %
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • Package Type
    2-Hole Flange
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.