IGN0912CW300 Image

IGN0912CW300

RF Transistor by Integra Technologies, Inc.

Note : Your request will be directed to Integra Technologies, Inc..

The IGN0912CW300 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.25 GHz, Power 54.77 dBm, Power(W) 299.92 W, Gain 13.5 dB, Power Gain (Gp) 12.5 to 13.5 dB. Tags: Flange. More details for IGN0912CW300 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0912CW300
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 MHz to 1.25 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.25 GHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    300 W
  • Gain
    13.5 dB
  • Power Gain (Gp)
    12.5 to 13.5 dB
  • Supply Voltage
    36 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    13.4 to 16.9 W
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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