IGN0912LM500 Image

IGN0912LM500

Note : Your request will be directed to Integra Technologies, Inc..

The IGN0912LM500 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.22 GHz, Power 56.99 dBm, Power(W) 500.03 W, Duty_Cycle 0.064, Gain 18 dB. Tags: Flange. More details for IGN0912LM500 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN0912LM500
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 MHz to 1.22 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.22 GHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • Pulsed Width
    48 x (32µs ON, 18µs OFF)
  • Duty_Cycle
    0.064
  • Gain
    18 dB
  • Power Gain (Gp)
    16.6 to 19 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.6 V
  • Input Power
    6.3 to 11 W
  • Quiescent Drain Current
    70 to 80 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.