IGN1011L1200

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IGN1011L1200 from Integra Technologies is an L-Band RF Transistor that operates from 1.03 to 1.09 GHz. The amplifier has been specified for use under class AB operation and provides an output peak powr of 1200 Watts with a power gain of 16.8 dB. The amplifier requires a 50 V power supply and is available in a metal based package sealed with Ceramic-Epoxy Lid that measures 34.04 mm × 9.78 mm.

Product Specifications

    Product Details

    • Part Number :
      IGN1011L1200
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1.03 to 1.09 GHz L-Band GaN Transistor for Avionics

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.030 to 1.090 GHz
    • Power :
      60.79 dBm
    • Power(W) :
      1199.5 W
    • Pulsed Width :
      48 x (32µs ON, 18µs OFF)
    • Duty_Cycle :
      0.064
    • Gain :
      17 dB
    • Power Gain (Gp) :
      15.8 to 18 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.8 V
    • Input Power :
      19 to 32 W
    • Quiescent Drain Current :
      150 to 170 mA
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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