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IGN1011L1200

RF Transistor by Integra Technologies, Inc. (162 more products)

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The IGN1011L1200 from Integra Technologies is an L-Band RF Transistor that operates from 1.03 to 1.09 GHz. The amplifier has been specified for use under class AB operation and provides an output peak powr of 1200 Watts with a power gain of 16.8 dB. The amplifier requires a 50 V power supply and is available in a metal based package sealed with Ceramic-Epoxy Lid that measures 34.04 mm × 9.78 mm.

Product Specifications

  • Part Number
    IGN1011L1200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.03 to 1.09 GHz L-Band GaN Transistor for Avionics
  • Transistor Type
  • Application
    L Band
  • Application Type
    Avionics, Military
  • Grade
    Military, Commercial, Aerospace
  • Frequency
    1030 to 1090 MHz
  • Gain
    16 to 18 dB (Power gain)
  • Power
    60.79 dBm
  • Input Power
    19 to 30 W
  • Drain Efficiency
    60% to 90%
  • Drain Leakage Current (Id)
    4 mA
  • Input Return Loss
    -18 to -10 dB
  • Voltage - Drain-Source (Vdss)
    180 V
  • Voltage - Gate-Source (Vgs)
    -10 to 0 V
  • Operating Temperature
    -55 to 200 Degrees C
  • Storage Temperature
    -55 to 150 Degrees C
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