IGN1011S3600

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The IGN1011S3600 from Integra Technologies is a GaN-on-SiC RF Power Transistor that operates from 1030 and 1090 MHz. It is based on the new 100 V RF GaN on SiC technology. The transistor delivers an output power of 3600 W with a gain of over 18 dB and an efficiency of more than 65%. It can handle an RF input power of 90 W and requires a DC supply of 100 V. The transistor is housed in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency. It is ideal for L-band avionics IFF & SSR systems and uplink & downlink transponder applications. 

Product Specifications

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Product Details

  • Part Number
    IGN1011S3600
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Avionics
  • Application Type
    L-band Avionics IFF & SSR Systems, uplink and downlink (Transponder)
  • CW/Pulse
    Pulse
  • Frequency
    1030 and 1090 MHz
  • Power
    65.56 dBm
  • Power(W)
    3600 W
  • Pulsed Width
    32 uS
  • Duty_Cycle
    4 %
  • Gain
    18 to 22 dB
  • Input Return Loss
    10 to 18 dB
  • VSWR
    2.0:1, 5.0:1
  • Supply Voltage
    100 V
  • Input Power
    90 W
  • Voltage - Drain-Source (Vdss)
    400 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Current
    75 mA
  • Drain Efficiency
    65 to 85 %
  • Drain Current
    144 A
  • Junction Temperature (Tj)
    -55 to 225 Degree C
  • Package Type
    Epoxy-sealed ceramic lid
  • RoHS
    Yes
  • Grade
    Commercial, Space Qualified, Military
  • Storage Temperature
    -55 to 150 Degree C