IGN1030L1000

RF Transistor by Integra Technologies, Inc. (205 more products)

Note : Your request will be directed to Integra Technologies, Inc..

The IGN1030L1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.030 GHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.064, Gain 17 dB. Tags: Flange. More details for IGN1030L1000 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IGN1030L1000
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1.030 GHz, HEMT Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.030 GHz
    • Power :
      60 dBm
    • Power(W) :
      1000 W
    • Pulsed Width :
      48 x (32µs ON, 18µs OFF)
    • Duty_Cycle :
      0.064
    • Gain :
      17 dB
    • Power Gain (Gp) :
      16 to 18.2 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.8 V
    • Input Power :
      15 to 25 W
    • Quiescent Drain Current :
      150 mA
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

Featured News

Find Transistors

Search from 1974 products from 22 companies

  • To
  • To
  • Search

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.