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IGN1090M800

RF Transistor by Integra Technologies, Inc.

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The IGN1090M800 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.090 GHz, Power 59.03 dBm, Power(W) 799.83 W, Duty_Cycle 0.02, Gain 17 dB. Tags: Flange. More details for IGN1090M800 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1090M800
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.090 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.090 GHz
  • Power
    59.03 dBm
  • Power(W)
    799.83 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.02
  • Gain
    17 dB
  • Power Gain (Gp)
    15 to 18 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    12.5 to 25 W
  • Quiescent Drain Current
    150 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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