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IGN1214M650A

RF Transistor by Integra Technologies, Inc.

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The IGN1214M650A from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 58.13 to 59.29 dBm, Power(W) 849.18 W, Duty_Cycle 0.1, Gain 12.5 dB. Tags: Flange. More details for IGN1214M650A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1214M650A
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.2 to 1.4 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    58.13 to 59.29 dBm
  • Power(W)
    849.18 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    12.5 dB
  • Power Gain (Gp)
    12.11 to 13.27 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    40 W
  • Quiescent Drain Current
    190 to 210 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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