Note : Your request will be directed to Integra Technologies, Inc..
The IGN2729M200 from Integra is an RF Power Transistor that operates from 2.7 to 2.9 GHz. It delivers 200 W of peak output power with a gain of more than 17 dB and has an efficiency of up to 70%. The transistor utilizes GaN-on-SiC HEMT technology, has a pulse width of 100 µs and a duty factor of 10%. It requires a DC supply of 50 V and has pre-matched input impedance. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency and is ideal for S-band radar system applications. It has an EAR99 export status.
18 GHz GaAs MESFET for Military and Commercial Applications
LDMOS Doherty MMIC from 3.4 to 3.8 GHz
5 W GaN Power Transistor from DC to 6 GHz
6 W RF Power GaN HEMT in a Plastic Package
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
800 W RF LDMOS Transistor from 730 to 960 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
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