IGN2729M200

Note : Your request will be directed to Integra Technologies, Inc..

IGN2729M200 Image

The IGN2729M200 from Integra is an RF Power Transistor that operates from 2.7 to 2.9 GHz. It delivers 200 W of peak output power with a gain of more than 17 dB and has an efficiency of up to 70%. The transistor utilizes GaN-on-SiC HEMT technology, has a pulse width of 100 µs and a duty factor of 10%. It requires a DC supply of 50 V and has pre-matched input impedance. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency and is ideal for S-band radar system applications. It has an EAR99 export status.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN2729M200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    200 W GaN Power Transistor from 2.7 to 2.9 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application Type
    S Band
  • Application
    S Band
  • CW/Pulse
    Pulse
  • Frequency
    2700 to 2900 MHz
  • Power
    53.01 dBm
  • Power(W)
    200 W
  • CW Power
    200 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10 %
  • Gain
    17 to 20 dB
  • Efficiency
    65 %
  • Input Return Loss
    10 to 25 dB
  • VSWR
    5:1
  • Supply Voltage
    50 V
  • Input Power
    2 to 4 W
  • Voltage - Drain-Source (Vdss)
    140 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1.5 V
  • Current
    1.3 mA
  • Drain Current
    13 A
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space Qualified
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents