IGN2729M400

RF Transistor by Integra Technologies, Inc. (199 more products)

Note : Your Quotation Request will be directed to Integra Technologies, Inc..

The IGN2729M400 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 46.02 dBm, Power(W) 39.99 W, Duty_Cycle 0.1, Gain 11 dB. Tags: Flange. More details for IGN2729M400 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IGN2729M400
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      2700 to 2900 MHz, 11 dB GaN Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      2.7 to 2.9 GHz
    • Power :
      46.02 dBm
    • Power(W) :
      39.99 W
    • Peak Output Power :
      400 to 634 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.1
    • Gain :
      11 dB
    • Power Gain (Gp) :
      10.71 to 12.71 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.8 V
    • Drain Bias Current :
      10000 to 24000 mA
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.