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The IGN2731M130 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 51.14 to 51.3 dBm, Power(W) 134.9 W, Duty_Cycle 0.1, Gain 14.8 dB. Tags: Flanged. More details for IGN2731M130 can be seen below.
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
25 W LDMOS FET from 500 to 1400 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
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