IGN4450M90

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IGN4450M90 from Integra Technologies, Inc. is a RF Transistor with Frequency 4.4 to 5 GHz, Power 39.54 dBm, Power(W) 8.99 W, Duty_Cycle 0.1, Gain 12.1 dB. Tags: Flange. More details for IGN4450M90 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IGN4450M90
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      4400 to 5000 MHz, 13 dB GaN Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      C Band
    • CW/Pulse :
      Pulse
    • Frequency :
      4.4 to 5 GHz
    • Power :
      39.54 dBm
    • Power(W) :
      8.99 W
    • Peak Output Power :
      90 to 143 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.1
    • Gain :
      12.1 dB
    • Power Gain (Gp) :
      12.55 to 14.56 dB
    • Supply Voltage :
      36 V
    • Threshold Voltage :
      -3.5 V
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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