IGNP2729M800

RF Transistor by Integra Technologies, Inc. (161 more products)

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The IGNP2729M800 from Integra Technologies, Inc. is a RF Transistor with Frequency 2700 to 2900 MHz, Gain 11 dB, Power 59.4 dBm, Input Power 870 W, Supply Voltage 50 V. More details for IGNP2729M800 can be seen below.

Product Specifications

  • Part Number
    IGNP2729M800
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2700 to 2900 MHz, 11 dB GaN Transistor
  • Transistor Type
  • Grade
    Military, Commercial, Space, Aerospace, SATCOM
  • Frequency
    2700 to 2900 MHz
  • Gain
    11 dB
  • Power
    59.4 dBm
  • Input Power
    870 W
  • Supply Voltage
    50 V
  • Drain Efficiency
    0.58
  • Input Return Loss
    9 dB
  • Power Dissipation (Pdiss)
    68 W
  • Package Type
    Flanged
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