IGT1112M90 Image

IGT1112M90

Note : Your request will be directed to Integra Technologies, Inc..

The IGT1112M90 from Integra is an X-Band Radar Transistor that operates from 10.8 to 11.8 GHz. This GaN-on-SiC RF power transistor supplies more than 90 watts of peak output power under 150µs, 10% duty cycle pulse conditions, with an associated 11 dB of gain and 43% efficiency. It operates from a 50 V supply voltage. The transistor is housed in a metal-based package with epoxy sealed ceramic lid and is best suited for X-band radar applications.

Product Specifications

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Product Details

  • Part Number
    IGT1112M90
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    GaN on SiC Transistor X-Band Radars from 11 to 12 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    10.8 to 11.8 GHz
  • Power
    49.54 dBm
  • Power(W)
    90 W
  • Duty_Cycle
    10 %
  • Gain
    11 dB
  • Efficiency
    43%
  • Supply Voltage
    50 V
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degrees C

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