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IGT1112M90

RF Transistor by Integra Technologies, Inc. (204 more products)

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The IGT1112M90 from Integra is an X-Band Radar Transistor that operates from 10.8 to 11.8 GHz. This GaN-on-SiC RF power transistor supplies more than 90 watts of peak output power under 150µs, 10% duty cycle pulse conditions, with an associated 9 dB of gain and 35% efficiency. It operates from a 50 V supply voltage. The transistor is housed in a metal-based package with epoxy sealed ceramic lid and is best suited for X-band radar applications.

Product Specifications

    Product Details

    • Part Number :
      IGT1112M90
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      GaN on SiC Transistor X-Band Radars from 11 to 12 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      10.8 to 11.8 GHz
    • Power :
      49.54
    • Power(W) :
      90 W
    • Duty_Cycle :
      10 %
    • Gain :
      9 dB
    • Effeciency :
      43 %
    • Supply Voltage :
      50 V
    • Impedance Zl :
      50 Ohms
    • Impedance Zs :
      50 Ohms
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degrees C

    Technical Documents

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