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IGT2731M130

RF Transistor by Integra Technologies, Inc. (202 more products)

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The IGT2731M130 from Integra Technologies is a S-Band pulsed power GaN Transistor that operates from 2.7 to 3.1 GHz. This depletion mode GaN Transistor provides 130 watts of pulsed power with a pulse width of 300us and duty cycle of 10%. It operates from a 50 V supply (requires a negative gate bias voltage and bias sequencing) and provides 13.5 dB of gain with a drain efficiency of 55%. It is matched to 50 ohms and is available in a sealed ceramic package. The transistor has been developed for S-Band radar applictions.

Product Specifications

    Product Details

    • Part Number :
      IGT2731M130
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      130 Watts GaN on SiC Transistor for S-Band Radar Applications

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      2.7 to 3.1 GHz
    • Power :
      51.14 dBm
    • Power(W) :
      130.02 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      14 to 20 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.3 V
    • Quiescent Drain Current :
      20 to 30 mA
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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