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IGT5259CW50 Image

The IGT5259CW50 from Integra is a C-band GaN on SiC power transistor that operates from 5.2 to 5.9 GHz. It provides an output CW power of over 50 W with a gain of 11.6 dB and an efficiency of up to 50%. This transistor requires a 28 V of power supply. It is available in a metal-based flanged surface mount package with the input and output ports matched to 50 ohms. This transistor is ideal for C-band Radar system applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC, GaN
  • Application Industry
  • CW/Pulse
    CW, Pulse
  • Frequency
    5.2 to 5.9 GHz
  • Power
    47 dBm
  • Power(W)
    50 W
  • Gain
    13 dB
  • Input Return Loss
    6 to 10 dB
  • Supply Voltage
    28 V
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Package
    Flanged Ceramic
  • RoHS
  • Storage Temperature
    -55 to 150 Degrees C

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