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IGT5259CW50

RF Transistor by Integra Technologies, Inc. (205 more products)

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The IGT5259CW50 from Integra is a C-band GaN on SiC power transistor that operates from 5.2 to 5.9 GHz. It provides an output CW power of over 50 W with a gain of 11.6 dB and an efficiency of up to 50%. This transistor requires a 28 V of power supply. It is available in a metal-based flanged surface mount package with the input and output ports matched to 50 ohms. This transistor is ideal for C-band Radar system applications.

Product Specifications

    Product Details

    • Part Number :
      IGT5259CW50
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      5.2 to 5.9 GHz
    • Power :
      47 dBm
    • Power(W) :
      50 W
    • Gain :
      13 dB
    • Input Return Loss :
      6 to 10 dB
    • Supply Voltage :
      28 V
    • Impedance Zl :
      50 Ohms
    • Impedance Zs :
      50 Ohms
    • Package :
      Flanged Ceramic
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degrees C

    Technical Documents

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