IGT5259L50 Image

IGT5259L50

RF Transistor by Integra Technologies, Inc.

Note : Your request will be directed to Integra Technologies, Inc..

The IGT5259L50 from Integra Technologies is a fully-matched, GaN-on-SiC HEMT that provides 50 W of peak pulsed output power while operating from 5 to 6 GHz. This transistor provides 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions. It is available in a RoHS-compatible metal/ceramic flange-mount package with gold metallization that measures 20.32 x 10.16 mm and is ideal for pulsed C-Band Radar applications. This device is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D.

Product Specifications

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Product Details

  • Part Number
    IGT5259L50
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    5.2 to 5.9 GHz
  • Power
    47 dBm
  • Power(W)
    50 W
  • Pulsed Width
    1 ms
  • Duty_Cycle
    15 %
  • Power Gain (Gp)
    13 to 15 dB
  • Input Return Loss
    -18 to -7 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.3 V
  • Drain Efficiency
    38 to 60 %
  • Drain Leakage Current (Id)
    1 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Dimension
    0.80 x 0.40 Inches
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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