The IGT9010M50 from Integra is an X-Band Power Transistor that operates from 9 to 10 GHz. This GaN-on-SiC RF power transistor supplies more than 50 watts of peak output power in less than 200 µs with a 10% duty cycle. It provides a gain of more than 10 dB with an efficiency of 37%. This transistor requires a 50 V supply. It is RoHS and REACH-compliant and is housed in a metal-based package with an epoxy sealed ceramic lid and is best suited for X-band radar applications.