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IGT9010M50

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The IGT9010M50 from Integra is an X-Band Power Transistor that operates from 9 to 10 GHz. This GaN-on-SiC RF power transistor supplies more than 50 watts of peak output power in less than 200 µs with a 10% duty cycle. It provides a gain of more than 10 dB with an efficiency of 37%. This transistor requires a 50 V supply. It is RoHS and REACH-compliant and is housed in a metal-based package with an epoxy sealed ceramic lid and is best suited for X-band radar applications.

Product Specifications

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Product Details

  • Part Number
    IGT9010M50
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    50 W GaN-on-SiC Power Transistor from 9 to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    9 to 10 GHz
  • Power
    47 dBm
  • Power(W)
    50 W
  • Duty_Cycle
    10 %
  • Gain
    10 to 12 dB
  • Efficiency
    43 Percent
  • Input Return Loss
    18 to 5 dB
  • Supply Voltage
    50 V
  • Input Power
    8 W
  • Voltage - Drain-Source (Vdss)
    130 VDC
  • Voltage - Gate-Source (Vgs)
    -8 to 1 VDC
  • Drain Current
    4.8 A
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • Package Type
    metal-based package
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Grade
    Commercial, Space
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Quiescent Gate Voltage :- - 2.6 V

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