ILD1214EL200 Image


RF Transistor by Integra Technologies, Inc. (162 more products)

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The ILD1214EL200 from Integra Technologies is a high power pulsed LDMOS transistor that operates from 1.215 GHz to 1.400 GHz. It provides peak pulse power of 200 W with 75% drain efficiency and up to 12.60 dB of gain. The transistor requires 30 V while drawing 15 A of current. It is housed in a thermally enhanced gold metal based package and is ideal for Military, Commercial, Space, Aerospace and SATCOM applications.

Product Specifications

  • Part Number
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band RF Power LDMOS Transistor
  • Transistor Type
  • Application
    L Band
  • Application Type
  • Grade
    Military, Commercial, Space, Aerospace, SATCOM
  • Frequency
    1200 to 1400 MHz
  • Gain
    12.1 dB
  • Power
    53.01 dBm
  • Input Power
    200 W
  • Supply Voltage
    30 V
  • Drain Efficiency
  • Input Return Loss
    7 dB
  • Power Dissipation (Pdiss)
    12.4 W
  • Package Type
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