ILD1214EL200

RF Transistor by Integra Technologies, Inc. (199 more products)

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The ILD1214EL200 from Integra Technologies is a high power pulsed LDMOS transistor that operates from 1.215 GHz to 1.400 GHz. It provides peak pulse power of 200 W with 75% drain efficiency and up to 12.60 dB of gain. The transistor requires 30 V while drawing 15 A of current. It is housed in a thermally enhanced gold metal based package and is ideal for Military, Commercial, Space, Aerospace and SATCOM applications.

Product Specifications

  • Part Number
    ILD1214EL200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band RF Power LDMOS Transistor
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.215 to 1.4 GHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • Peak Output Power
    200 W
  • Pulsed Width
    5 ms
  • Duty_Cycle
    0.2
  • Gain
    12.1 dB
  • Power Gain (Gp)
    10 to 16.5 dB
  • Supply Voltage
    30 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Input Power
    4.5 to 20 W
  • Breakdown Voltage - Drain-Source
    65 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -40 to 150 Degree C
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