MAGe-102425-300 Image

MAGe-102425-300

RF Transistor by MACOM (190 more products)

Note : Your Quotation Request will be directed to MACOM.

The MAGe-102425-300 from Macom is a cost effective GaN power transistor. It provides output power of 300 Watts with a gain of 18 dB and efficiency of 70% at 2.45GHz. This transistor is available in a RoHS complaint cost effective plastic packaging optimized for use in commercial scale solid-state RF energy applications. This new GaN transistor delivers performance that defies the inherent power efficiency and density limitations of LDMOS at an equivalent price profile at highvolume production levels. It is a highly efficient and precise heat and power source for a wide range of commercial applications including microwave ovens, automotive ignition, lighting systems and industrial, scientific and medical (ISM) applications including RF plasma lighting, material drying, blood and tissue heating and ablation, and beyond.

Product Specifications

  • Part Number
    MAGe-102425-300
  • Manufacturer
    MACOM
  • Description
    300 Watt Low Cost GaN Power Transistor in a Plastic Package
  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM
  • Application
    ISM Band
  • CW/Pulse
    CW
  • Frequency
    0 to 2.5 GHz
  • Gain
    18 dB
  • Supply Voltage
    50 V
  • Drain Efficiency
    0.7
  • Package Type
    Flange
  • Package
    TO-272S-4
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