MAGX-000035-01000P Image

MAGX-000035-01000P

RF Transistor by MACOM (187 more products)

Note : Your Quotation Request will be directed to MACOM.

The MAGX-000035-01000P is a GaN on SiC unmatched power transistor that operates from DC to 3.5 GHz. This wideband transistor provides 10 W CW / Pulsed power and requires a 50 V supply for operation. It is available in a compact plastic package that measur

Product Specifications

  • Part Number
    MAGX-000035-01000P
  • Manufacturer
    MACOM
  • Description
    10 W CW/Pulsed Wideband GaN Transistor from DC to 3.5 GHz in a Plastic Package
  • Transistor Type
  • Application Industry
    Commercial
  • Grade
    Military, Commercial, Space
  • Frequency
    DC to 3.5 GHz
  • Gain
    14.8 to 15.5 dB (Power Gain)
  • Power Gain (Gp)
    14.8 to 15.5 dB
  • Power
    10 W
  • Supply Voltage
    50 to 65 V
  • Current
    500 mA
  • Drain Leakage Current (Id)
    1 mA
  • Matching
    Unmatched
  • Input Capacitance
    2.2 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    0.9 pF
  • Power Dissipation (Pdiss)
    12 W
  • Voltage - Gate-Source (Vgs)
    -8 V to 0 V
  • Package Type
    Surface Mount
  • Package
    Surface Mount
  • Dimension
    3 x 6 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 95 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
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