MAGX-000035-09000P Image

MAGX-000035-09000P

RF Transistor by MACOM (187 more products)

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The MAGX-000035-09000P from MACOM is a GaN wideband 90 W pulsed transistor which operates from DC to 3.5 GHz. It has a gain of 13 dB to 25 dB, a power of 85 W to 100 W, an efficiency from 52% to 75% and requires 50 V of supply voltage. The transistor is h

Product Specifications

  • Part Number
    MAGX-000035-09000P
  • Manufacturer
    MACOM
  • Description
    DC to 3.5 GHz, GaN wideband 90 W Pulsed Transistor
  • Transistor Type
  • Grade
    Military, Commercial, Space
  • Frequency
    DC to 3.5 GHz
  • Gain
    13 to 25 dB
  • Power Gain (Gp)
    11 to 22 dB
  • Power
    90 W
  • Supply Voltage
    50 V
  • Drain Current
    4500 mA
  • Drain Leakage Current (Id)
    6 mA
  • Power Added Effeciency
    52% to 75%
  • Input Capacitance
    22 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    9.8 pF
  • Power Dissipation (Pdiss)
    27 W
  • Saturated Power
    85 to 100 W
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    3 x 6 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 95 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
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