MAGX-000912-650L00 Image

MAGX-000912-650L00

RF Transistor by MACOM (187 more products)

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The MAGX-000912-650L0 from MACOM is a GaN on SiC HEMT pulsed power transistor that operates from 960 to 1215 MHz. It provides peak power of up to 650 Watts, with a gain of 21 dB and drain efficiency of 62 %. The transistor has a pulse of 128 µs, duty of 10 % and requires a supply of +65 V (at 33 A current) .This rugged and robust transistor, boasts a mean time to failure (MTTF) of 600 years.It can be used for civilian and military applications.

Product Specifications

  • Part Number
    MAGX-000912-650L00
  • Manufacturer
    MACOM
  • Description
    960 to 1215 MHz, GaN on SiC HEMT Pulsed Power Transistor
  • Transistor Type
  • Application
    L Band
  • Application Type
    GPS, Cellular
  • Grade
    Military, Commercial, Space
  • Frequency
    960 MHz to 1.215 GHz
  • Gain
    20 to 21 db
  • Power
    650 W
  • Input Power
    5.2 to 6.5 W
  • Supply Voltage
    50 V
  • Drain Efficiency
    57 to 62%
  • Drain Current
    20.3 to 21 A
  • Drain Leakage Current (Id)
    1.7 mA
  • Feedback Capacitance
    5.5 to 5. pF
  • Output Capacitance
    55 pF
  • Voltage - Gate-Source (Vgs)
    50 V
  • Package Type
    Flanged
  • Package
    Flanged
  • RoHS
    Yes
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