MAGX-001090-600L00 Image

MAGX-001090-600L00

RF Transistor by MACOM (187 more products)

Note : Your Quotation Request will be directed to MACOM.

The MAGX-001090-600L00 from MACOM is a gold-metalized, matched GaN on Silicon Carbide, 600 W pulsed RF power transistor that operates from 1030 to 1090 MHz. It has a power gain of 21.4 dB and has a drain effeciency of 63%. The device has very low thermal

Product Specifications

  • Part Number
    MAGX-001090-600L00
  • Manufacturer
    MACOM
  • Description
    600 W, SiC-GaN, Pulsed Power Transistor
  • Transistor Type
  • Application
    L Band
  • Application Type
    Radar
  • Grade
    Military, Commercial, Space
  • Frequency
    1.03 to 1.09 GHz
  • Gain
    20.8 to 21.3 dB
  • Power Gain (Gp)
    19.5 to 21.4 dB
  • Power
    600 W
  • Supply Voltage
    50 V
  • Drain Efficiency
    63%
  • Current
    82 A
  • Drain Current
    1 to 30 mA
  • Drain Leakage Current (Id)
    18.6 A
  • Technology
    GaN, SiC-HEMT
  • Voltage - Gate-Source (Vgs)
    -8 to -2 V
  • Thermal Resistance
    0.05 Degrees C/W
  • Package Type
    Flanged
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 90 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
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