MAGX-001214-650L00 Image

MAGX-001214-650L00

RF Transistor by MACOM (187 more products)

Note : Your Quotation Request will be directed to MACOM.

The MAGX-001214-650L00 from MACOM is a GaN pulsed power transistor that operates from 1200 to 1400 MHz. It provides a gain from 18 to 19.5 dB, power of 38.45 to 39.4 dBm and requires a 65 V supply for operation. The flanged transistor can be optimized for pulsed L-Band radar applications.

Product Specifications

  • Part Number
    MAGX-001214-650L00
  • Manufacturer
    MACOM
  • Description
    1200 to 1400 MHz GaN Pulsed Power Transistor
  • Transistor Type
  • Application
    L Band
  • Application Type
    Radar
  • Grade
    Military, Commercial, Space
  • Frequency
    1.2 to 1.4 GHz
  • Gain
    18.8 to 19.7 dB
  • Power
    650 W
  • Input Power
    7.5 to 10.3 Watts(peak)
  • Supply Voltage
    50 V
  • Drain Efficiency
    55% to 60%
  • Drain Current
    21.1 to 22.4 A
  • Drain Leakage Current (Id)
    1.7 to 33 mA
  • Output Capacitance
    55 pF
  • Voltage - Gate-Source (Vgs)
    -8 to -2 V
  • Package Type
    Flanged
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 90 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
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