MRF173

RF Transistor by MACOM (190 more products)

Note : Your Quotation Request will be directed to MACOM.

The MRF173 from MACOM is a RF Transistor with Frequency 5 to 175 MHz, Power 49.03 dBm, Power(W) 79.98 W, Gain 11 dB, Power Gain (Gp) 11 to 13 dB. Tags: Flange. More details for MRF173 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MRF173
    • Manufacturer :
      MACOM
    • Description :
      Si Based TMOS Transistor

    General Parameters

    • Transistor Type :
      MOSFET
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence, Radar, ISM, Broadcast
    • Application :
      Avionics, Communication, Commercial, Military, Medical
    • CW/Pulse :
      CW
    • Frequency :
      5 to 175 MHz
    • Power :
      49.03 dBm
    • Power(W) :
      79.98 W
    • Gain :
      11 dB
    • Power Gain (Gp) :
      11 to 13 dB
    • Noise Figure :
      1.5 dB
    • Polarity :
      N-Channel
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      1 to 6 V
    • Drain Gate Voltage :
      65 Vdc
    • Breakdown Voltage - Drain-Source :
      65 V
    • Voltage - Gate-Source (Vgs) :
      40 Vdc
    • Leakage Current :
      1 µAdc (Gate body leakage)
    • Package Type :
      Flange
    • Package :
      Flange Ceramic

    Technical Documents

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