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MRF173CQ

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The MRF173CQ from MACOM is a RF Transistor with Frequency 5 to 175 MHz, Power 49.03 dBm, Power(W) 79.98 W, Gain 11 dB, Power Gain (Gp) 11 to 13 dB. More details for MRF173CQ can be seen below.

Product Specifications

  • Part Number
    MRF173CQ
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor
  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM, Broadcast
  • Application
    Avionics, Communication, Commercial, Military, Medical
  • CW/Pulse
    CW
  • Frequency
    5 to 175 MHz
  • Power
    49.03 dBm
  • Power(W)
    79.98 W
  • Gain
    11 dB
  • Power Gain (Gp)
    11 to 13 dB
  • Noise Figure
    1.5 dB
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 6 V
  • Drain Gate Voltage
    65 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flange
  • Package
    Flange Ceramic
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