MRF174 Image

MRF174

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The MRF174 from MACOM is a RF Transistor with Frequency 5 to 200 MHz, Power 50.97 dBm, Power(W) 125.03 W, Gain 9 dB, Power Gain (Gp) 9 to 11.8 dB. More details for MRF174 can be seen below.

Product Specifications

  • Part Number
    MRF174
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor
  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM
  • Application
    Avionics, Communication, Commercial, Military, Medical
  • CW/Pulse
    CW
  • Frequency
    5 to 200 MHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • Gain
    9 dB
  • Power Gain (Gp)
    9 to 11.8 dB
  • Noise Figure
    3 dB
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 6 Vdc
  • Drain Gate Voltage
    65 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flange
  • Package
    Flange Ceramic
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